Nuclear spin polarization transfer across an organic-semiconductor interface
نویسندگان
چکیده
Motivated by Tycko’s proposal to harness optically pumped nuclear spin polarization for the enhancement of nuclear magnetic resonance ~NMR! signals from biological macromolecules, we investigate the transfer of thermal nuclear spin polarization between H or F in an organic overlayer and P at the surface of micron-sized InP particles by Hartmann–Hahn cross polarization. Comparison with analytic and numerical models indicates that the total quantity of polarization transferred across the semiconductor-organic interface is limited by the relatively short room-temperature H T1r ~11 ms! and the slow diffusion of nuclear spin polarization in the semiconductor. Models and spin-counting experiments indicate that we are able to transfer approximately 20% of the total nuclear spin polarization originating in the organic overlayer to the semiconductor, supporting the feasibility of transferred optically pumped NMR. © 2003 American Institute of Physics. @DOI: 10.1063/1.1617975#
منابع مشابه
Spin polarization of excitons in organic multiferroic composites
Recently, the discovery of room temperature magnetoelectricity in organic charge transfer complexes has reignited interest in the multiferroic field. The solution processed, large-area and low cost organic semiconductor materials offer new possibilities for the functional all organic multiferroic devices. Here we report the spin polarization of excitons and charge transfer states in organic cha...
متن کاملElectric control of spin injection into a ferroelectric semiconductor.
Electric-field control of spin-dependent properties has become one of the most attractive phenomena in modern materials research due to the promise of new device functionalities. One of the paradigms in this approach is to electrically toggle the spin polarization of carriers injected into a semiconductor using ferroelectric polarization as a control parameter. Using first-principles density-fu...
متن کامل"Spin Injection and Scattering in Semiconductor Heterostructures"*
Efforts to implement semiconductor-based spintronic devices have been crippled by the lack of an efficient and practical means to electrically inject spin-polarized carriers into a semiconductor heterostructure. Spin injection from semimagnetic semiconductor contacts (ZnMnSe/AlGaAs/GaAs) has produced electron spin polarizations of ~ 85% in the GaAs QW [1]. Several factors potentially limit spin...
متن کاملDirectional interlayer spin-valley transfer in two-dimensional heterostructures
Van der Waals heterostructures formed by two different monolayer semiconductors have emerged as a promising platform for new optoelectronic and spin/valleytronic applications. In addition to its atomically thin nature, a two-dimensional semiconductor heterostructure is distinct from its three-dimensional counterparts due to the unique coupled spin-valley physics of its constituent monolayers. H...
متن کاملSpin accumulation in forward-biased MnAs/GaAs Schottky diodes.
We describe a new means for all-electrical generation of spin polarization in semiconductors. In contrast with spin injection of electrons by tunneling through a reverse-biased Schottky barrier, we observe accumulation at the metal-semiconductor interface of forward-biased ferromagnetic Schottky diodes, which is consistent with a theory of spin-dependent reflection off the interface. Spatiotemp...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2003